| PART |
Description |
Maker |
| UPD43257BGU-70L UPD43257BGU-70LL UPD43257BGU-85L U |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| AT28HC256-12DM_883 AT28HC256-12FM_883 AT28HC256-12 |
From old datasheet system
256 (32K x 8) High Speed CMOS
256 32K X 8 HIGH SPEED PARALLEL EEPROMS
256 32K x 8 High Speed CMOS E2PROM
|
ATMEL[ATMEL Corporation]
|
| AT28HC256-12JC AT28HC256-12JI AT28HC256-12PC AT28H |
256 (32K x 8) high speed parallel EEPROM, 90ns
256 (32K x 8) high speed parallel EEPROM, 120ns
High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-PDIP -55 to 125 32K X 8 EEPROM 5V, 120 ns, PDIP28
High Speed CMOS Quad Analog Switches with Level Translation 16-SOIC -55 to 125 32K X 8 EEPROM 5V, 70 ns, PDIP28
High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-SOIC -55 to 125 32K X 8 EEPROM 5V, 120 ns, PDSO28
256 32K x 8 High Speed Parallel EEPROMs 32K X 8 EEPROM 5V, 90 ns, CDIP28
High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-PDIP -55 to 125 32K X 8 EEPROM 5V, 70 ns, PQCC32
High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-PDIP -55 to 125 32K X 8 EEPROM 5V, 90 ns, PQCC32
High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-SOIC -55 to 125 32K X 8 EEPROM 5V, 70 ns, PDIP28
High Speed CMOS Quad Analog Switches with Level Translation 16-TSSOP -55 to 125 32K X 8 EEPROM 5V, 70 ns, PQCC32
High Speed CMOS Quad Analog Switches with Level Translation 16-TSSOP -55 to 125 32K X 8 EEPROM 5V, 70 ns, PDIP28
REED RELAY, SPST, 24V, ES
256 32K x 8 High Speed CMOS E2PROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| IDT70V07L55G IDT70V07S55G IDT70V07L55PF |
400V N-Channel MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 32K X 8 DUAL-PORT SRAM, 55 ns, CPGA68
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 55 ns, CPGA68
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 55 ns, PQFP80
|
Integrated Device Technology, Inc.
|
| HI586008 HI5860IA HI5860SOICEVAL1 HI5860IA-T |
12-Bit, 130 MSPS, High Speed D/A Converter; Temperature Range: -40°C to 85°C; Package: 28-TSSOP T&R PARALLEL, WORD INPUT LOADING, 0.035 us SETTLING TIME, 12-BIT DAC, PDSO28
12-Bit, 130MSPS, High Speed D/A Converter
|
Intersil, Corp.
Intersil Corporation
|
| UM61256 |
32K x 8-Bit High Speed CMOS SRAM
|
UTRON
|
| MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| KM68B261A KM68B261A-6 KM68B261A-7 KM68B261A-8 |
32K x 8 Bit High-Speed BiCMOS Static RAM
|
Samsung semiconductor
|
| CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM
65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group
SONY
|
|
